Introduction

Silicon carbide (SiC) wafers have attracted much attention due to their superior performance in power electronics, electric vehicles (EVs), and renewable energy. Large-sized wafers (such as 150mm and 200mm) are expected to enhance production efficiency, but their production faces numerous challenges. This article will briefly introduce these challenges and explore how the industry responds.

Large-sized SiC wafers are prone to defects such as dislocations, microtubules and stacking failures, which can reduce the performance of the equipment. For instance, research shows that the dislocation density of 6-inch N-type SiC wafers has dropped to 2307 cm⁻², but further optimization is still neededNatureIn In addition, polymorphic stability and residual stress are also key issues, which may cause the wafer to warp or crack.

Manufacturing and economic challenges

The production of SiC wafers requires high temperatures and high energy consumption, resulting in high costs. At present, each crystal rod can only produce 40 to 50 wafers, which is far lower than the output of silicon wafersEntegris。The risks of equipment wear and contamination further increase costs, and the hard and brittle nature of the wafers also makes cutting and processing more difficult.

Future Outlook

Despite the significant challenges, the industry is seeking solutions through research and development and collaboration. For instance, Entegris collaborates with manufacturers to optimize the production processEntegris。Market demand drives innovation, but technological complexity may delay progress.

Detailed Report: Challenge Analysis of Large-Sized SiC Wafers

Introduction and Background

Silicon carbide (SiC) wafers have become important materials in the fields of power electronics, electric vehicles (EVs), telecommunications and renewable energy due to their superior performance in high-voltage, high-frequency and high-temperature environments. Especially with the growth in demand for electric vehicles and renewable energy, the development of large-sized SiC wafers (such as 150mm and 200mm) is regarded as the key to enhancing production efficiency and reducing costs. However, expanding the wafer size brings significant technical and economic challenges. This report will delve into these challenges in detail and analyze the industry's response strategies based on the latest research and industry trends as of April 20, 2025.

Challenges in Materials Science

The production of large-sized SiC wafers first faces the challenge of material quality. Studies show that as the wafer size increases, the defect density rises significantly, affecting the performance of the equipment. The following are the main problems:

Dislocation density: High dislocation density (approximately 10³ - 10⁴ cm⁻²) will reduce the performance of N-type SiC. For instance, the total dislocation density of the 6-inch N-type SiC wafer has dropped to 2307 cm⁻², among which the base plane dislocation (BPD) is 333 cm⁻² and the helical dislocation (TSD) is 19 cm⁻² Nature。The dislocation density has been significantly reduced through lateral growth and hydrogen etching, but further optimization is still needed.

Residual stress and base surface bending: Large-sized wafers are vulnerable to residual stress and base surface bending, which may lead to warping or cracking. Research shows that the compressive stress of 6-inch semi-insulated SiC wafers along the < 11-20 > direction is -763 to -490 MPa, while the tensile stress along the < 1-100 > direction is 673 to 2953 MPa, with a gradient of 17 MPa mm⁻¹, which is prone to cracking . Reducing the growth rate can decrease stress inheritance, but the technical difficulty is high.

Microtube density: Microtubes are another major defect of SiC wafers. The microtube density of 6-inch N-type and semi-insulated SiC has dropped to less than 0.5 cm⁻², and for some N-type SiC, it is even as low as 0.1 cm⁻² Nature. However, maintaining low density on larger-sized wafers remains challenging.

Conclusion

The development of large-sized SiC wafers is an important direction in the semiconductor industry, but it faces multiple challenges such as material defects, high costs, and process adaptation. Although the industry has made progress through research and development and cooperation, the technical complexity and economic pressure still need time to be resolved. With the continuous growth in demand for electric vehicles and renewable energy, it is expected that these challenges will be gradually overcome over the next decade, promoting the wide application of SiC technology in high-performance applications.