Introduction

Silicon wafers are pivotal in semiconductor manufacturing, and the 6-inch P/N Type (100) Silicon Wafer with 1~10Ω resistivity and oxide layer offers unmatched versatility for advanced electronics. Combining precise doping, crystal orientation, and a functional oxide coating, this substrate bridges the gap between research innovation and industrial-scale production. This article delves into its specifications, applications, and why it’s a preferred choice for engineers.

Key Specifications

1. Substrate Design

   • 6-Inch Diameter: Balances cost-efficiency and throughput for IC fabrication, MEMS, and power devices.

   • (100) Crystal Orientation: Ensures optimal carrier mobility and compatibility with CMOS and photonic devices.

2. Resistivity Range (1~10Ω)

   • P-Type (Boron-doped): Ideal for power transistors, solar cells, and high-voltage applications.

   • N-Type (Phosphorus/Arsenic-doped): Suits high-frequency circuits, sensors, and low-loss devices.

   • Adjustable doping levels accommodate diverse electrical performance needs.

3. Integrated Oxide Layer

   • Thermally grown silicon dioxide (SiO₂) provides insulation, surface passivation, or a dielectric layer.

   • Enhances device reliability by reducing leakage currents and interface defects.

Advantages of the Oxide Layer

• Surface Protection: Shields against contamination during fabrication.

• Dielectric Isolation: Critical for gate oxides in transistors and capacitor structures.

• Thermal Stability: Withstands annealing and oxidation processes up to 1,100°C.

Why Opt for This Wafer?

• Dual Doping Flexibility: Choose P- or N-Type based on device polarity requirements.

• Broad Resistivity Range: Adaptable to both high-power and precision analog designs.

• Pre-Applied Oxide Layer: Saves time and costs by eliminating additional coating steps.

• Industry-Grade Quality: Compliant with automotive, aerospace, and consumer electronics standards.

Conclusion

The 6-inch P/N Type (100) Silicon Wafer with 1~10Ω resistivity and oxide layer is a cornerstone of modern semiconductor engineering. Its adaptable doping, robust oxide integration, and compatibility with cutting-edge applications make it indispensable for innovators in electronics, energy, and microfabrication.

Empower your next project with this high-performance, multi-functional substrate!